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Oxidation Differences on Si-vs. C-terminated Surfaces of SiC during Planarization in the Fabrication of High-power, High-frequency Semiconductor Device
Year of publication 2023
Title of paper Oxidation Differences on Si-vs. C-terminated Surfaces of SiC during Planarization in the Fabrication of High-power, High-frequency Semiconductor Device
Author Ganggyu Lee, Yeram Lee, Sungmin Kim, Donghwan Kim, Hongjun Park, Myungju Woo, Taeseup Song, Ungyu Paik
Publication in journal
Status of publication submitted
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   ded50510-17df-432b-8f9d-bbabcfbe7d2b.pdf (1.4M) [14] DATE : 2023-10-06 09:50:45