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Oxidation Differences on Si-vs. C-terminated Surfaces of SiC during Planarization in the Fabrication of High-power, High-frequency Semiconductor Device
| Year of publication | 2023 | |||||
| Title of paper | Oxidation Differences on Si-vs. C-terminated Surfaces of SiC during Planarization in the Fabrication of High-power, High-frequency Semiconductor Device | |||||
| Author | Ganggyu Lee, Yeram Lee, Sungmin Kim, Donghwan Kim, Hongjun Park, Myungju Woo, Taeseup Song, Ungyu Paik | |||||
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| Status of publication | submitted | |||||
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